TPS1101PWRG4
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Main description | Trans MOSFET P-CH Si 15V 2.18A 16-Pin TSSOP T/R |
Trans MOSFET P-CH Si 15V 2.18A 16-Pin TSSOP T/R
Informacje podstawowe
- ProducentTexas Instruments
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- PCNs 42
- MaskPart TPS1101PW%G4
- IntroductionDate Mar 01, 2005
Parametry
- Category Small Signal
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Hex Drain Quint Source
- Material Si
- Maximum Continuous Drain Current (A) 2.18
- Maximum Drain Source Resistance (mOhm) 90(Typ)@10V
- Maximum Drain Source Voltage (V) 15
- Maximum Gate Source Voltage (V) 2
- Maximum Power Dissipation (mW) 710
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 13
- Typical Gate Charge @ 10V (nC) 11.25
- Typical Gate Charge @ Vgs (nC) 11.25@10V
- Typical Input Capacitance @ Vds (pF) N/A
- Typical Rise Time (ns) 5.5
- Typical Turn-Off Delay Time (ns) 19
- Typical Turn-On Delay Time (ns) 6.5