SI4835DDY-T1-GE3
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R |
Trans MOSFET P-CH 30V 8.7A 8-Pin SOIC N T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 145
- Inventory 7
- PCNs 29
- GIDEP-Alerts 5
- MaskPart SI4835DDY%GE3
- IntroductionDate Mar 13, 2008
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 8.7
- Maximum Continuous Drain Current @ Temperature (A) 10.5@Tc=70C|7.7@Ta=70C
- Maximum Drain Source Resistance (mOhm) 18@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 18@10V|30@4.5V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Voltage (V) ±25
- Maximum Gate Threshold Voltage (V) 3
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) 40@4V|25@6V|20@8V|19.5@10V
- Typical Drain Source Resistance @ 25°C (mOhm) 14@10V|24.5@4.5V
- Typical Fall Time (ns) 9|15
- Typical Forward Transconductance (S) 23
- Typical Gate Charge @ 10V (nC) 43
- Typical Gate Charge @ Vgs (nC) 43@10V|22@4.5V
- Typical Gate Resistance (Ohm) 1.3
- Typical Gate to Drain Charge (nC) 11
- Typical Gate to Source Charge (nC) 6
- Typical Input Capacitance @ Vds (pF) 1960@15V
- Typical Output Capacitance (pF) 380
- Typical Reverse Recovery Charge (nC) 20
- Typical Rise Time (ns) 13|100
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 32|28
- Typical Turn-On Delay Time (ns) 11|44