Si2312CDS-T1-GE3
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R |
Trans MOSFET N-CH 20V 5A 3-Pin SOT-23 T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 111
- Inventory 9
- PCNs 27
- GIDEP-Alerts 5
- MaskPart Si2312CDS%GE3
- IntroductionDate Mar 23, 2010
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 5
- Maximum Drain Source Resistance (mOhm) 31.8@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Voltage (V) ±8
- Maximum Power Dissipation (mW) 1250
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 8
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 12@5V|8.8@4.5V
- Typical Input Capacitance @ Vds (pF) 865@10V
- Typical Rise Time (ns) 17
- Typical Turn-Off Delay Time (ns) 31
- Typical Turn-On Delay Time (ns) 8