Si2309CDS-T1-GE3

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Main description	Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R

PARAMETRY PRODUKTU

Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R

Informacje podstawowe

ProducentVishay
EURoHSYes (2011/65/EU, 2015/863)
Automotive No

Informacje dodatkowe

Crosses 20
Inventory 10
PCNs 26
GIDEP-Alerts 2
MaskPart Si2309CDS%GE3
IntroductionDate Oct 30, 2008

Parametry

Category Power MOSFET
Channel Mode Enhancement
Channel Type P
Configuration Single
Material N/A
Maximum Continuous Drain Current (A) 1.6
Maximum Continuous Drain Current @ Temperature (A) 1.3@Tc=70C
Maximum Continuous Drain Current on PCB @ TC=25°C (A) 1.2
Maximum Diode Forward Voltage (V) 1.2
Maximum Drain Source Resistance (mOhm) 345@10V
Maximum Drain Source Resistance @ Vgs (mOhm) 345@10V|450@4.5V
Maximum Drain Source Voltage (V) 60
Maximum Gate Resistance (Ohm) N/A
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum IDSS (uA) 1
Maximum Junction Ambient Thermal Resistance 120°C/W
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 166
Maximum Junction Case Thermal Resistance N/A
Maximum Offset Voltage (mV) N/A
Maximum Operating Temperature (°C) 150
Maximum Positive Gate Source Voltage (V) 20
Maximum Power Dissipation (mW) 1000
Maximum Power Dissipation on PCB @ TC=25°C (W) 1
Maximum Pulsed Drain Current @ TC=25°C (A) 8
Maximum Storage Temperature (°C) 150
Minimum Gate Resistance (Ohm) N/A
Minimum Gate Threshold Voltage (V) 1
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Operating Junction Temperature (°C) -55 to 150
Process Technology TrenchFET
Supplier Temperature Grade N/A
Tradename TrenchFET®
Typical Diode Forward Voltage (V) 0.8
Typical Drain Source Resistance @ 125°C (mOhm) 630@4V|530@6V|510@8V|500@10V
Typical Drain Source Resistance @ 25°C (mOhm) 285@10V|360@4.5V
Typical Fall Time (ns) 10
Typical Forward Transconductance (S) 2.8
Typical Gate Charge @ 10V (nC) N/A
Typical Gate Charge @ Vgs (nC) 2.7@4.5V
Typical Gate Plateau Voltage (V) 3
Typical Gate Resistance (Ohm) 7
Typical Gate Threshold Voltage (V) N/A
Typical Gate to Drain Charge (nC) 1.2
Typical Gate to Source Charge (nC) 0.8
Typical Input Capacitance @ Vds (pF) 210@30V
Typical Output Capacitance (pF) 28
Typical Reverse Recovery Charge (nC) 33
Typical Reverse Recovery Time (ns) 30
Typical Reverse Transfer Capacitance @ Vds (pF) 20@30V
Typical Rise Time (ns) 35
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 15
Typical Turn-On Delay Time (ns) 40