PHB21N06T/T3
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Main description | Trans MOSFET N-CH 55V 21A 3-Pin(2+Tab) D2PAK T/R |
Trans MOSFET N-CH 55V 21A 3-Pin(2+Tab) D2PAK T/R
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 1
- PCNs 13
- MaskPart PHB21N06T%
- IntroductionDate Dec 01, 1997
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 21
- Maximum Drain Source Resistance (mOhm) 75@10V
- Maximum Drain Source Voltage (V) 55
- Maximum Gate Source Voltage (V) ±20
- Number of Elements per Chip 1
- Process Technology TrenchFET