PHB14NQ20T
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Main description | Trans MOSFET N-CH 200V 14A 3-Pin(2+Tab) D2PAK |
Trans MOSFET N-CH 200V 14A 3-Pin(2+Tab) D2PAK
Informacje podstawowe
- ProducentNXP Semiconductors
- Automotive No
Informacje dodatkowe
- Crosses 100
- PCNs 16
- MaskPart PHB14NQ20T%
- IntroductionDate Oct 01, 1999
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 14
- Maximum Drain Source Resistance (mOhm) 230@10V
- Maximum Drain Source Voltage (V) 200
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 125000
- Number of Elements per Chip 1
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 31
- Typical Gate Charge @ 10V (nC) 38
- Typical Gate Charge @ Vgs (nC) 38@10V
- Typical Input Capacitance @ Vds (pF) 1500@25V
- Typical Rise Time (ns) 40
- Typical Turn-Off Delay Time (ns) 83
- Typical Turn-On Delay Time (ns) 25