PHB13N40E
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 400V 13.7A 3-Pin(2+Tab) D2PAK |
Trans MOSFET N-CH 400V 13.7A 3-Pin(2+Tab) D2PAK
Informacje podstawowe
- ProducentNXP Semiconductors
- Automotive No
Informacje dodatkowe
- Crosses 8
- PCNs 12
- MaskPart PHB13N40E%
- IntroductionDate Jan 01, 1998
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 13.7
- Maximum Drain Source Resistance (mOhm) 350@10V
- Maximum Drain Source Voltage (V) 400
- Maximum Gate Source Leakage Current (nA) 200
- Maximum Gate Source Voltage (V) ±30
- Maximum Gate Threshold Voltage (V) 4
- Maximum IDSS (uA) 25
- Maximum Power Dissipation (mW) 156000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 42
- Typical Gate Charge @ 10V (nC) 79
- Typical Gate Charge @ Vgs (nC) 79@10V
- Typical Input Capacitance @ Vds (pF) 1283@25V
- Typical Rise Time (ns) 40
- Typical Turn-Off Delay Time (ns) 100
- Typical Turn-On Delay Time (ns) 16