Trans RF BJT NPN 30V 3-Pin NI-200Z
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- PCNs 13
- MaskPart MRF859S%
- IntroductionDate May 23, 1995
Parametry
- Configuration Single
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 55
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 30
- Maximum Collector-Emitter Voltage Range (V) 30 to 40
- Maximum DC Collector Current (A) N/A
- Maximum DC Collector Current Range (A) N/A
- Maximum Emitter Base Voltage (V) 4
- Maximum Power Dissipation (mW) 34000
- Maximum Transition Frequency (MHz) N/A
- Minimum DC Current Gain 20@1A@5V
- Minimum DC Current Gain Range 2 to 30
- Number of Elements per Chip 1
- Output Power (W) 6.5
- Supplier Temperature Grade N/A
- Type NPN