Trans RF BJT NPN
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- PCNs 13
- MaskPart MRF842%
- IntroductionDate Jan 01, 1992
Parametry
- Configuration N/A
- Material N/A
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) N/A
- Maximum Collector Cut-Off Current (nA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) N/A
- Maximum Collector-Emitter Voltage Range (V) N/A
- Maximum DC Collector Current (A) N/A
- Maximum DC Collector Current Range (A) N/A
- Maximum Emitter Base Voltage (V) N/A
- Maximum Emitter Cut-Off Current (nA) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) N/A
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) N/A
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain N/A
- Minimum DC Current Gain Range N/A
- Minimum Storage Temperature (°C) N/A
- Number of Elements per Chip N/A
- Operational Bias Conditions N/A
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) N/A