Trans RF BJT NPN 22V 3-Pin NI-200Z
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- PCNs 15
- MaskPart MRF6401%
Parametry
- Configuration Single Dual Emitter
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 45
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 22
- Maximum Collector-Emitter Voltage Range (V) 20 to 30
- Maximum DC Collector Current (A) N/A
- Maximum DC Collector Current Range (A) N/A
- Maximum Emitter Base Voltage (V) 3.5
- Maximum Power Dissipation (mW) 5800
- Maximum Transition Frequency (MHz) N/A
- Minimum DC Current Gain 20@0.1A@5V
- Minimum DC Current Gain Range 2 to 30
- Number of Elements per Chip 1
- Output Power (W) 0.5
- Supplier Temperature Grade N/A
- Type NPN