MRF5943GR1
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 30V 0.4A 1000mW 8-Pin SO T/R |
Trans RF BJT NPN 30V 0.4A 1000mW 8-Pin SO T/R
Informacje podstawowe
- ProducentMicrosemi
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- PCNs 36
- MaskPart MRF5943GR1%
Parametry
- Configuration Single Dual Base Dual Collector Quad Emitter
- Material N/A
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) 1@10mA@100mA
- Maximum Collector Base Voltage (V) 40
- Maximum Collector Cut-Off Current (nA) 100000
- Maximum Collector-Emitter Saturation Voltage (V) 0.2@10mA@100mA
- Maximum Collector-Emitter Voltage (V) 30
- Maximum Collector-Emitter Voltage Range (V) 30 to 40
- Maximum DC Collector Current (A) 0.4
- Maximum DC Collector Current Range (A) 0.12 to 0.5
- Maximum Emitter Base Voltage (V) 3.5
- Maximum Emitter Cut-Off Current (nA) 500000
- Maximum Junction Ambient Thermal Resistance 125°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 1000
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) 1300(Typ)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 25@50mA@15V
- Minimum DC Current Gain Range 2 to 30
- Minimum Storage Temperature (°C) N/A
- Number of Elements per Chip 1
- Operational Bias Conditions 15V/35mA
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) 17