MRF5943C
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 30V 0.4A 1000mW 3-Pin TO-39 |
Trans RF BJT NPN 30V 0.4A 1000mW 3-Pin TO-39
Informacje podstawowe
- ProducentASI Semiconductor, Inc
- EURoHSUnknown (2002/95/EC)
Informacje dodatkowe
- MaskPart MRF5943C%
- IntroductionDate Dec 03, 2003
Parametry
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 40
- Maximum Collector Cut-Off Current (nA) 50000
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 30
- Maximum Collector-Emitter Voltage Range (V) 30 to 40
- Maximum DC Collector Current (A) 0.4
- Maximum DC Collector Current Range (A) 0.12 to 0.5
- Maximum Emitter Base Voltage (V) 3.5
- Maximum Emitter Cut-Off Current (nA) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) 5.5(Typ)
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 1000
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 25@50mA@15V
- Minimum DC Current Gain Range 2 to 30
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions 15V/35mA
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) 11.4