MRF581T

Więcej informacji
Do pobrania Download
Main description General purpose Small Signal
General purpose Small Signal

Informacje podstawowe

  • ProducentMicrosemi
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • PCNs 34
  • MaskPart MRF581T%
  • IntroductionDate Jan 01, 2000

Parametry

  • Category Bipolar Small Signal
  • Configuration N/A
  • Material N/A
  • Maximum 3rd Order Intercept Point (dBm) N/R
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) N/A
  • Maximum DC Collector Current (A) N/A
  • Maximum Delay Time (ns) N/A
  • Maximum Emitter Base Voltage (V) N/A
  • Maximum Fall Time (ns) N/A
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power 1dB Compression (dBm) N/R
  • Maximum Power Dissipation (mW) N/A
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) N/A
  • Maximum Storage Time (ns) N/A
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain N/A
  • Minimum Operating Temperature (°C) N/A
  • Minimum Storage Temperature (°C) N/A
  • Number of Elements per Chip N/A
  • Operational Bias Conditions N/R
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type N/A
  • Typical Power Gain (dB) N/R
Copyright © CBTG technologie - Dystrybucja Komponentów Elektronicznych