MRF454
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Main description | Trans RF BJT NPN 25V 20A 4-Pin Case 211-11 |
Trans RF BJT NPN 25V 20A 4-Pin Case 211-11
Informacje podstawowe
- ProducentMACOM
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 6
- Inventory 2
- PCNs 11
- MaskPart MRF454%
- IntroductionDate May 06, 2009
- EnablingEnergyEfficiency No
Parametry
- Configuration Single Dual Emitter
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 45
- Maximum Collector Cut-Off Current (nA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 25
- Maximum Collector-Emitter Voltage Range (V) 20 to 30
- Maximum DC Collector Current (A) 20
- Maximum DC Collector Current Range (A) 8 to 100
- Maximum Emitter Base Voltage (V) 4
- Maximum Emitter Cut-Off Current (nA) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance 0.7°C/W
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 250000
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 40@5A@5V
- Minimum DC Current Gain Range 30 to 50
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/A
- Output Power (W) 80
- Supplier Temperature Grade N/A
- Type NPN
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) 250(Max)
- Typical Power Gain (dB) 12(Min)