MRF4427R2

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Main description Trans RF BJT NPN 20V 0.4A 8-Pin SO T/R
Trans RF BJT NPN 20V 0.4A 8-Pin SO T/R

Informacje podstawowe

  • ProducentMicrosemi
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 2
  • PCNs 36
  • MaskPart MRF4427%
  • IntroductionDate Oct 25, 1999

Parametry

  • Configuration Single Dual Base Dual Collector Quad Emitter
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 40
  • Maximum Collector-Emitter Saturation Voltage (V) 0.06(Typ)@20mA@100mA
  • Maximum Collector-Emitter Voltage (V) 20
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) 0.4
  • Maximum DC Collector Current Range (A) 0.12 to 0.5
  • Maximum Emitter Base Voltage (V) 2
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power Dissipation (mW) 1500
  • Maximum Transition Frequency (MHz) 1300(Typ)
  • Minimum DC Current Gain 10@100mA@5V|5@360mA@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
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