MRF282Z
| Do pobrania | Download |
|---|---|
| Main description | Trans RF MOSFET N-CH 65V 3-Pin NI-200Z |
Trans RF MOSFET N-CH 65V 3-Pin NI-200Z
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 1
- PCNs 13
- MaskPart MRF282Z%
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) N/A
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 2600
- Maximum Gate Source Voltage (V) ±20
- Maximum Noise Figure (dB) N/A
- Maximum Power Dissipation (mW) 60000
- Maximum Storage Temperature (°C) 150
- Maximum VSWR 10
- Minimum Frequency (MHz) N/A
- Minimum Storage Temperature (°C) -65
- Mode of Operation 1-Tone|2-Tone
- Number of Elements per Chip 1
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 40
- Typical Fall Time (ns) N/A
- Typical Forward Transconductance (S) N/A
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) 15@26V
- Typical Output Capacitance @ Vds (pF) 8@26V
- Typical Power Gain (dB) 11.5
- Typical Power Gain @ Vds (dB) 10.5|9.5
- Typical Reverse Transfer Capacitance @ Vds (pF) 0.45@26V
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A