MRF174
| Do pobrania | Download |
|---|---|
| Main description | Trans RF MOSFET N-CH 65V 13A 4-Pin Case 211-11 |
Trans RF MOSFET N-CH 65V 13A 4-Pin Case 211-11
Informacje podstawowe
- ProducentMACOM
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 1
- Inventory 3
- PCNs 11
- MaskPart MRF174%
- IntroductionDate May 06, 2009
- EnablingEnergyEfficiency No
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Source
- Material N/A
- Maximum Continuous Drain Current (A) 13
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 200
- Maximum Gate Source Voltage (V) ±40
- Maximum Noise Figure (dB) 3(Typ)
- Maximum Power Dissipation (mW) 270000
- Maximum VSWR 30
- Minimum Frequency (MHz) N/A
- Mode of Operation N/A
- Number of Elements per Chip 1
- Output Power (W) 125
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 60
- Typical Fall Time (ns) N/A
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) 175@28V
- Typical Power Gain (dB) 11.8
- Typical Power Gain @ Vds (dB) 11.8
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A