MRF171AG
| Do pobrania | Download |
|---|---|
| Main description | Trans RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07 |
Trans RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 3
- PCNs 17
- MaskPart MRF171AG%
- IntroductionDate Jul 18, 2001
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MRF171AG&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Source
- Maximum Continuous Drain Current (A) 4.5
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 200
- Maximum Gate Source Voltage (V) ±20
- Maximum Noise Figure (dB) N/A
- Maximum Power Dissipation (mW) 115000
- Maximum VSWR 30
- Minimum Frequency (MHz) 30
- Mode of Operation N/A
- Number of Elements per Chip 1
- Output Power (W) 45
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 70
- Typical Fall Time (ns) N/A
- Typical Forward Transconductance (S) 1.8
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) 60@28V
- Typical Output Capacitance @ Vds (pF) 70@28V
- Typical Power Gain (dB) 20
- Typical Power Gain @ Vds (dB) 19.5|20
- Typical Reverse Transfer Capacitance @ Vds (pF) 8@28V
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A