MRF166C
| Do pobrania | Download |
|---|---|
| Main description | Trans RF MOSFET N-CH 65V 4A 6-Pin Case 319-07 |
Trans RF MOSFET N-CH 65V 4A 6-Pin Case 319-07
Informacje podstawowe
- ProducentMACOM
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Inventory 4
- PCNs 11
- MaskPart MRF166C%
- IntroductionDate May 04, 2009
- EnablingEnergyEfficiency No
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Quad Source
- Material N/A
- Maximum Continuous Drain Current (A) 4
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 500
- Maximum Gate Source Leakage Current (nA) 1000
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4.5
- Maximum IDSS (uA) 500
- Maximum Noise Figure (dB) N/A
- Maximum Power Dissipation (mW) 70000
- Maximum Storage Temperature (°C) 150
- Maximum VSWR 30
- Minimum Frequency (MHz) N/A
- Minimum Storage Temperature (°C) -65
- Mode of Operation N/A
- Number of Elements per Chip 1
- Output Power (W) 20
- Process Technology DMOS
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 55
- Typical Fall Time (ns) N/A
- Typical Forward Transconductance (S) 0.0011
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) 28@28V
- Typical Output Capacitance @ Vds (pF) 30@28V
- Typical Power Gain (dB) 16
- Typical Power Gain @ Vds (dB) 16
- Typical Reverse Transfer Capacitance @ Vds (pF) 4@28V
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A