MRF158
| Do pobrania | Download |
|---|---|
| Main description | Trans RF MOSFET N-CH 65V 0.5A 4-Pin Case 305A-01 |
Trans RF MOSFET N-CH 65V 0.5A 4-Pin Case 305A-01
Informacje podstawowe
- ProducentMACOM
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 3
- Inventory 3
- PCNs 9
- MaskPart MRF158%
- IntroductionDate May 04, 2009
- EnablingEnergyEfficiency No
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Source
- Material N/A
- Maximum Continuous Drain Current (A) 0.5
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 500
- Maximum Gate Source Leakage Current (nA) 1000
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 5
- Maximum IDSS (uA) 500
- Maximum Noise Figure (dB) N/A
- Maximum Power Dissipation (mW) 8000
- Maximum Storage Temperature (°C) 150
- Maximum VSWR 30
- Minimum Frequency (MHz) N/A
- Minimum Storage Temperature (°C) -65
- Mode of Operation N/A
- Number of Elements per Chip 1
- Output Power (W) 2
- Process Technology DMOS
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 55
- Typical Fall Time (ns) N/A
- Typical Forward Transconductance (S) 0.11
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) 3@28V
- Typical Output Capacitance @ Vds (pF) 4@28V
- Typical Power Gain (dB) 18
- Typical Power Gain @ Vds (dB) 18
- Typical Reverse Transfer Capacitance @ Vds (pF) 0.45@28V
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A