MRF10005
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 55V 0.001A 3-Pin Case 336E-02 |
Trans RF BJT NPN 55V 0.001A 3-Pin Case 336E-02
Informacje podstawowe
- ProducentMACOM
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 44
- Inventory 2
- PCNs 10
- MaskPart MRF10005%
- IntroductionDate May 04, 2009
- EnablingEnergyEfficiency No
Parametry
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 55
- Maximum Collector Cut-Off Current (nA) 1000000
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 55
- Maximum Collector-Emitter Voltage Range (V) 50 to 60
- Maximum DC Collector Current (A) 0.001
- Maximum DC Collector Current Range (A) 0.001 to 0.06
- Maximum Emitter Base Voltage (V) 3.5
- Maximum Emitter Cut-Off Current (nA) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance 7°C/W
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 25000
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 200
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 20@500mA@5V
- Minimum DC Current Gain Range 2 to 30
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/A
- Output Power (W) 5
- Supplier Temperature Grade N/A
- Type NPN
- Typical Input Capacitance (pF) 10.3
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) 10.3