MRD3051
| Main description | Phototransistor IR Chip Silicon |
|---|
Phototransistor IR Chip Silicon
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- PCNs 17
- MaskPart MRD3051%
- IntroductionDate Aug 14, 2007
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MRD3051&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Cut-Off Filter Visible Cut-off
- Fabrication Technology NPN Transistor
- Half Intensity Angle Degrees (°) N/A
- Lens Color N/A
- Lens Dimensions (mm) 4.01
- Lens Shape Type Domed
- Material Silicon
- Maximum Collector Current (mA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 30
- Maximum Dark Current (nA) 100
- Maximum Emitter-Collector Voltage (V) 5
- Maximum Emitter-Collector Voltage Range (V) 3.3 to 9
- Maximum Fall Time (ns) 3500(Typ)
- Maximum Light Current (uA) 200(Typ)
- Maximum Power Dissipation (mW) 250
- Maximum Rise Time (ns) 2000(Typ)
- Number of Channels per Chip 1
- Peak Wavelength (nm) N/A
- Phototransistor Type Phototransistor
- Polarity NPN
- Supplier Temperature Grade N/A
- Type IR Chip
- Viewing Orientation Top View