MJD45H11T4
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|---|---|
| Main description | Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R |
Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentSTMicroelectronics
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 22
- Inventory 5
- PCNs 23
- MaskPart MJD45H11%
- IntroductionDate Nov 12, 1997
Parametry
- Category Bipolar Power
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) 1.5@0.8A@8A
- Maximum Collector Base Voltage (V) 80
- Maximum Collector Cut-Off Current (nA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) 1@0.4A@8A
- Maximum Collector-Emitter Voltage (V) 80
- Maximum DC Collector Current (A) 8
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 5
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance 6.25°C/W
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 20000
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 60@2A@1V|40@4A@1V
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type PNP
- Typical Power Gain (dB) N/R