MJD45H11T4

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Main description Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R

Informacje podstawowe

  • ProducentSTMicroelectronics
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 22
  • Inventory 5
  • PCNs 23
  • MaskPart MJD45H11%
  • IntroductionDate Nov 12, 1997

Parametry

  • Category Bipolar Power
  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/R
  • Maximum Base Emitter Saturation Voltage (V) 1.5@0.8A@8A
  • Maximum Collector Base Voltage (V) 80
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) 1@0.4A@8A
  • Maximum Collector-Emitter Voltage (V) 80
  • Maximum DC Collector Current (A) 8
  • Maximum Delay Time (ns) N/A
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Fall Time (ns) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance 6.25°C/W
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/R
  • Maximum Power Dissipation (mW) 20000
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 60@2A@1V|40@4A@1V
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/R
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type PNP
  • Typical Power Gain (dB) N/R
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