MJD44H11T4-A
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Main description | Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2+Tab) DPAK T/R |
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentSTMicroelectronics
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive Yes
Informacje dodatkowe
- Crosses 22
- Inventory 4
- PCNs 22
- MaskPart MJD44H11T4A%
- IntroductionDate Aug 06, 2009
Parametry
- Category Bipolar Power
- Configuration Single
- Material N/A
- Maximum Base Emitter Saturation Voltage (V) 1.5@0.8A@8A
- Maximum Collector Base Voltage (V) N/A
- Maximum Collector-Emitter Saturation Voltage (V) 1@0.4A@8A
- Maximum Collector-Emitter Voltage (V) 80
- Maximum DC Collector Current (A) 8
- Maximum Emitter Base Voltage (V) 5
- Maximum Power Dissipation (mW) 20000
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Minimum DC Current Gain 60@2A@1V|40@4A@1V
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Output Power (W) N/R
- Supplier Temperature Grade Automotive
- Type NPN