MJD44H11T4-A

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Main description Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2+Tab) DPAK T/R
Trans GP BJT NPN 80V 8A 20000mW Automotive 3-Pin(2+Tab) DPAK T/R

Informacje podstawowe

  • ProducentSTMicroelectronics
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive Yes

Informacje dodatkowe

  • Crosses 22
  • Inventory 4
  • PCNs 22
  • MaskPart MJD44H11T4A%
  • IntroductionDate Aug 06, 2009

Parametry

  • Category Bipolar Power
  • Configuration Single
  • Material N/A
  • Maximum Base Emitter Saturation Voltage (V) 1.5@0.8A@8A
  • Maximum Collector Base Voltage (V) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) 1@0.4A@8A
  • Maximum Collector-Emitter Voltage (V) 80
  • Maximum DC Collector Current (A) 8
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 20000
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) N/A
  • Minimum DC Current Gain 60@2A@1V|40@4A@1V
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Output Power (W) N/R
  • Supplier Temperature Grade Automotive
  • Type NPN
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