MJD31CT4G
| Do pobrania | Download |
|---|---|
| Main description | Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 16
- Inventory 8
- PCNs 29
- GIDEP-Alerts 2
- MaskPart MJD31C%G
- IntroductionDate Sep 25, 1998
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MJD31CT4G&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Bipolar Power
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Current (A) 1
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 100
- Maximum Collector Cut-Off Current (nA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) 1.2@375mA@3A
- Maximum Collector-Emitter Voltage (V) 100
- Maximum DC Collector Current (A) 3
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 5
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance 80°C/W
- Maximum Junction Case Thermal Resistance 8.3°C/W
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 1560
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Storage Time (ns) N/A
- Maximum Transition Frequency (MHz) 3(Min)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 25@1A@4V|10@3A@4V
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type NPN
- Typical Power Gain (dB) N/R