MJD31CT4-A

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Main description Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin(2+Tab) TO-252 T/R
Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin(2+Tab) TO-252 T/R

Informacje podstawowe

  • ProducentSTMicroelectronics
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive Yes

Informacje dodatkowe

  • Crosses 42
  • Inventory 6
  • PCNs 25
  • MaskPart MJD31CT4A%
  • IntroductionDate Apr 24, 2007

Parametry

  • Category Bipolar Power
  • Configuration Single
  • Material N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 100
  • Maximum Collector-Emitter Saturation Voltage (V) 1.2@375mA@3A
  • Maximum Collector-Emitter Voltage (V) 100
  • Maximum DC Collector Current (A) 3
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 15000
  • Maximum Transition Frequency (MHz) N/A
  • Minimum DC Current Gain 25@1A@4V|10@3A@4V
  • Minimum Operating Temperature (°C) -65
  • Number of Elements per Chip 1
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type NPN
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