MJD31CT4-A
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Main description | Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin(2+Tab) TO-252 T/R |
Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin(2+Tab) TO-252 T/R
Informacje podstawowe
- ProducentSTMicroelectronics
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive Yes
Informacje dodatkowe
- Crosses 42
- Inventory 6
- PCNs 25
- MaskPart MJD31CT4A%
- IntroductionDate Apr 24, 2007
Parametry
- Category Bipolar Power
- Configuration Single
- Material N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 100
- Maximum Collector-Emitter Saturation Voltage (V) 1.2@375mA@3A
- Maximum Collector-Emitter Voltage (V) 100
- Maximum DC Collector Current (A) 3
- Maximum Emitter Base Voltage (V) 5
- Maximum Power Dissipation (mW) 15000
- Maximum Transition Frequency (MHz) N/A
- Minimum DC Current Gain 25@1A@4V|10@3A@4V
- Number of Elements per Chip 1
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type NPN