K9F5608U0D-JIB0
| Do pobrania | Download |
|---|---|
| Main description | SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 63-Pin FBGA |
SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 63-Pin FBGA
Informacje podstawowe
- ProducentSamsung Electronics
- EURoHSYes (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 25
- PCNs 13
- MaskPart K9F5608U0DJIB0%
- IntroductionDate Jan 26, 1999
- SupplierUrl http://www.samsung.com/global/business/semiconductor/partnumberSearch.do?webpartnum=K9F5608U0D-JIB0&cdnpartnum=&ppmi=PartnoSearch
Parametry
- Address Bus Width (bit) 25
- Architecture Sectored
- Bank Size N/R
- Block Organization Symmetrical
- Boot Block No
- Cell Type SLC NAND
- Command Compatible No
- Density (bit) 256M
- Density in Bits (bit) 268435456
- ECC Support Yes
- Erase Suspend/Resume Modes Support No
- Interface Type Parallel
- Location of Boot Block N/R
- Maximum Access Time (ns) 15000
- Maximum Erase Time (s) 0.003/Block
- Maximum Page Access Time (ns) 50(Min)
- Maximum Programming Time (ms) 0.5/Chip
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -65
- Number of Banks N/A
- Number of Bits per Word (bit) 8
- Number of Words 32M
- OE Access Time (ns) N/A
- Page Read Current (mA) N/A
- Page Size 512byte
- Program Current (mA) 25
- Programmability Yes
- Programming Voltage (V) N/A
- Sector Size 16Kbyte x 2048
- Simultaneous Read/Write Support No
- Supplier Temperature Grade Industrial
- Support of Common Flash Interface No
- Support of Page Mode Yes
- Timing Type Asynchronous