K9F2G08U0A-PIB0
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Main description | SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I |
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
Informacje podstawowe
- ProducentSamsung Electronics
- EURoHSYes (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 52
- PCNs 9
- MaskPart K9F2G08U0APIB0%
- IntroductionDate May 22, 2001
- SupplierUrl http://www.samsung.com/global/business/semiconductor/partnumberSearch.do?webpartnum=K9F2G08U0A-PIB0&cdnpartnum=&ppmi=PartnoSearch
Parametry
- Address Bus Width (bit) 29
- Architecture Sectored
- Bank Size N/R
- Block Organization Symmetrical
- Boot Block No
- Cell Type SLC NAND
- Command Compatible No
- Density (bit) 2G
- Density in Bits (bit) 2147483648
- ECC Support Yes
- Erase Suspend/Resume Modes Support No
- Interface Type Parallel
- Location of Boot Block N/R
- Maximum Access Time (ns) N/A
- Maximum Erase Time (s) 0.002/Block
- Maximum Page Access Time (ns) 25(Min)
- Maximum Programming Time (ms) 0.7/Page
- Number of Banks N/A
- Number of Bits per Word (bit) 8
- Number of Words 256M
- OE Access Time (ns) N/A
- Page Read Current (mA) 30
- Page Size 2Kbyte
- Program Current (mA) 30
- Programmability Yes
- Programming Voltage (V) N/A
- Sector Size 128Kbyte x 2048
- Simultaneous Read/Write Support No
- Supplier Temperature Grade Industrial
- Support of Common Flash Interface No
- Support of Page Mode Yes
- Timing Type Asynchronous