IRLR2908TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 9
- Inventory 7
- PCNs 92
- MaskPart IRLR2908%PBF
- IntroductionDate Jul 26, 2004
- EnablingEnergyEfficiency No
- AliasParts SP001553170
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLR2908TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material Si
- Maximum Continuous Drain Current (A) 39
- Maximum Drain Source Resistance (mOhm) 28@10V
- Maximum Drain Source Voltage (V) 80
- Maximum Gate Source Voltage (V) ±16
- Maximum Power Dissipation (mW) 120000
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 55
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 22@4.5V
- Typical Input Capacitance @ Vds (pF) 1890@25V
- Typical Rise Time (ns) 95
- Typical Turn-Off Delay Time (ns) 36
- Typical Turn-On Delay Time (ns) 12