IRLML2402TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 20V 1.2A 3-Pin SOT-23 T/R |
Trans MOSFET N-CH 20V 1.2A 3-Pin SOT-23 T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 3
- Inventory 3
- PCNs 78
- MaskPart IRLML2402%PBF
- IntroductionDate Dec 19, 2003
- EnablingEnergyEfficiency No
- AliasParts SP001552710
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLML2402TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 1.2
- Maximum Continuous Drain Current @ Temperature (A) 0.95@Ta=70C
- Maximum Drain Source Resistance (mOhm) 250@4.5V
- Maximum Drain Source Resistance @ Vgs (mOhm) 250@4.5V|350@2.7V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Voltage (V) ±12
- Maximum Gate Threshold Voltage (V) 0.7(Min)
- Maximum Junction Ambient Thermal Resistance 230°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 540
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 4.8
- Typical Forward Transconductance (S) 1.3(Min)
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 2.6@4.5V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 1.1
- Typical Gate to Source Charge (nC) 0.41
- Typical Input Capacitance @ Vds (pF) 110@15V
- Typical Reverse Recovery Charge (nC) 16
- Typical Rise Time (ns) 9.5
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 9.7
- Typical Turn-On Delay Time (ns) 2.5