IRG4BC30W-SPbF
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Main description | Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(2+Tab) D2PAK Tube |
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(2+Tab) D2PAK Tube
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 48
- Inventory 3
- PCNs 17
- MaskPart IRG4BC30WSPbF%
- IntroductionDate Aug 31, 2004
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRG4BC30W-SPbF
Parametry
- Channel Type N
- Configuration Single
- Maximum Collector-Emitter Voltage (V) 600
- Maximum Continuous Collector Current (A) 23
- Maximum Gate Emitter Leakage Current (uA) 0.1
- Maximum Gate Emitter Voltage (V) ±20
- Maximum Power Dissipation (mW) 100000
- Supplier Temperature Grade N/A
- Typical Collector Emitter Saturation Voltage (V) N/A