IRG4BC30W-SPbF

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Main description Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(2+Tab) D2PAK Tube
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(2+Tab) D2PAK Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 48
  • Inventory 3
  • PCNs 17
  • MaskPart IRG4BC30WSPbF%
  • IntroductionDate Aug 31, 2004
  • EnablingEnergyEfficiency No
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRG4BC30W-SPbF

Parametry

  • Channel Type N
  • Configuration Single
  • Maximum Collector-Emitter Voltage (V) 600
  • Maximum Continuous Collector Current (A) 23
  • Maximum Gate Emitter Leakage Current (uA) 0.1
  • Maximum Gate Emitter Voltage (V) ±20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 100000
  • Minimum Operating Temperature (°C) -55
  • Supplier Temperature Grade N/A
  • Typical Collector Emitter Saturation Voltage (V) N/A
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