IRFTS8342TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 30V 8.2A 6-Pin TSOP T/R |
Trans MOSFET N-CH 30V 8.2A 6-Pin TSOP T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 13
- Inventory 7
- PCNs 21
- MaskPart IRFTS8342%PbF
- IntroductionDate Feb 23, 2012
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFTS8342TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Quad Drain
- Material N/A
- Maximum Continuous Drain Current (A) 8.2
- Maximum Drain Source Resistance (mOhm) 19@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 2.35
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 2000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 8.2
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 4.8@4.5V
- Typical Input Capacitance @ Vds (pF) 560@25V
- Typical Rise Time (ns) 15
- Typical Turn-Off Delay Time (ns) 9.1
- Typical Turn-On Delay Time (ns) 7.3