IRFR9120NTRPBF
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Main description | Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 30
- Inventory 9
- PCNs 55
- MaskPart IRFR9120N%PBF
- IntroductionDate Mar 10, 2004
- EnablingEnergyEfficiency No
- AliasParts SP001557182
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFR9120NTRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 6.6
- Maximum Drain Source Resistance (mOhm) 480@10V
- Maximum Drain Source Voltage (V) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 40000
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 31
- Typical Gate Charge @ 10V (nC) 27(Max)
- Typical Gate Charge @ Vgs (nC) 27(Max)@10V
- Typical Input Capacitance @ Vds (pF) 350@25V
- Typical Rise Time (ns) 47
- Typical Turn-Off Delay Time (ns) 28
- Typical Turn-On Delay Time (ns) 14