IRFR5410TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 25
- Inventory 8
- PCNs 72
- MaskPart IRFR5410%PBF
- IntroductionDate Jun 01, 2004
- EnablingEnergyEfficiency No
- AliasParts SP001557100
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFR5410TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single
- Material Si
- Maximum Continuous Drain Current (A) 13
- Maximum Drain Source Resistance (mOhm) 205@10V
- Maximum Drain Source Voltage (V) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 66000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 46
- Typical Gate Charge @ 10V (nC) 58(Max)
- Typical Gate Charge @ Vgs (nC) 58(Max)@10V
- Typical Input Capacitance @ Vds (pF) 760@25V
- Typical Rise Time (ns) 58
- Typical Turn-Off Delay Time (ns) 45
- Typical Turn-On Delay Time (ns) 15