IRFR024NTRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 49
- Inventory 9
- PCNs 81
- MaskPart IRFR024N%PBF
- IntroductionDate Mar 02, 2004
- EnablingEnergyEfficiency No
- AliasParts SP001552090
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFR024NTRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 17
- Maximum Continuous Drain Current @ Temperature (A) 12@Tc=100C
- Maximum Drain Source Resistance (mOhm) 75@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 75@10V
- Maximum Drain Source Voltage (V) 55
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum Junction Ambient Thermal Resistance 110°C/W
- Maximum Junction Case Thermal Resistance 3.3°C/W
- Maximum Power Dissipation (mW) 45000
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 27
- Typical Forward Transconductance (S) 4.5(Min)
- Typical Gate Charge @ 10V (nC) 20(Max)
- Typical Gate Charge @ Vgs (nC) 20(Max)@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 7.6(Max)
- Typical Gate to Source Charge (nC) 5.3(Max)
- Typical Input Capacitance @ Vds (pF) 370@25V
- Typical Output Capacitance (pF) 140
- Typical Reverse Recovery Charge (nC) 120
- Typical Rise Time (ns) 34
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 19
- Typical Turn-On Delay Time (ns) 4.9