IRFBF30PBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB |
Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 51
- Inventory 5
- PCNs 43
- GIDEP-Alerts 4
- MaskPart IRFBF30PBF%
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 3.6
- Maximum Drain Source Resistance (mOhm) 3700@10V
- Maximum Drain Source Voltage (V) 900
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 125000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 30
- Typical Gate Charge @ 10V (nC) 78(Max)
- Typical Gate Charge @ Vgs (nC) 78(Max)@10V
- Typical Input Capacitance @ Vds (pF) 1200@25V
- Typical Rise Time (ns) 25
- Typical Turn-Off Delay Time (ns) 90
- Typical Turn-On Delay Time (ns) 14