IRF7604TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 20V 3.6A 8-Pin SOIC T/R |
Trans MOSFET P-CH 20V 3.6A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 23
- PCNs 18
- MaskPart IRF7604%PBF
- IntroductionDate Feb 21, 2005
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7604TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 3.6
- Maximum Continuous Drain Current @ Temperature (A) 2.9@Ta=70C
- Maximum Drain Source Resistance (mOhm) 90@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 90@4.5V|130@2.7V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±12
- Maximum Gate Threshold Voltage (V) 0.7(Min)
- Maximum IDSS (uA) 1
- Maximum Junction Ambient Thermal Resistance 70°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 1800
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 38
- Typical Forward Transconductance (S) 2.6(Min)
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 13@4.5V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 5.6
- Typical Gate to Source Charge (nC) 2.6
- Typical Input Capacitance @ Vds (pF) 590@15V
- Typical Output Capacitance (pF) 330
- Typical Reverse Recovery Charge (nC) 38
- Typical Rise Time (ns) 53
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 31
- Typical Turn-On Delay Time (ns) 17