FDC658P
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 30V 4A 6-Pin SuperSOT T/R |
Trans MOSFET P-CH 30V 4A 6-Pin SuperSOT T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 30
- Inventory 7
- PCNs 43
- GIDEP-Alerts 1
- MaskPart FDC658P%
- IntroductionDate Mar 17, 1999
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=FDC658P&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain
- Material N/A
- Maximum Continuous Drain Current (A) 4
- Maximum Drain Source Resistance (mOhm) 50@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 3
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 1600
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TMOS
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 16
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 8@5V
- Typical Input Capacitance @ Vds (pF) 750@15V
- Typical Rise Time (ns) 14
- Typical Turn-Off Delay Time (ns) 24
- Typical Turn-On Delay Time (ns) 12