FDC6312P
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 20V 2.3A 6-Pin SuperSOT T/R |
Trans MOSFET P-CH 20V 2.3A 6-Pin SuperSOT T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 29
- Inventory 4
- PCNs 40
- MaskPart FDC6312P%
- IntroductionDate Sep 26, 2000
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=FDC6312P&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Dual
- Material N/A
- Maximum Continuous Drain Current (A) 2.3
- Maximum Drain Source Resistance (mOhm) 115@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Voltage (V) ±8
- Maximum Power Dissipation (mW) 960
- Number of Elements per Chip 2
- Process Technology TMOS
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 8
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 4.4@4.5V
- Typical Input Capacitance @ Vds (pF) 467@10V
- Typical Rise Time (ns) 13
- Typical Turn-Off Delay Time (ns) 18
- Typical Turn-On Delay Time (ns) 8