BCX70H

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Main description Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23

Informacje podstawowe

  • ProducentCentral Semiconductor
  • EURoHSUnknown (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 359
  • PCNs 1
  • MaskPart BCX70H%
  • IntroductionDate Feb 28, 2003

Parametry

  • Category Bipolar Small Signal
  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/R
  • Maximum Base Emitter Saturation Voltage (V) 0.85@250uA@10mA|1.05@1.25mA@50mA
  • Maximum Collector Base Voltage (V) 45
  • Maximum Collector-Emitter Saturation Voltage (V) 0.35@250uA@10mA|0.55@1.25mA@50mA
  • Maximum Collector-Emitter Voltage (V) 45
  • Maximum DC Collector Current (A) 0.1
  • Maximum Delay Time (ns) N/A
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Fall Time (ns) N/A
  • Maximum Noise Figure (dB) 6
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/R
  • Maximum Power Dissipation (mW) 350
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Storage Time (ns) N/A
  • Maximum Transition Frequency (MHz) 250(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 40@10uA@5V|180@2mA@5V|70@50mA@1V
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/R
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Power Gain (dB) N/R
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