BC858BWT106
Do pobrania | Download |
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Main description | Trans GP BJT PNP 30V 0.1A 350mW 3-Pin UMT T/R |
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin UMT T/R
Informacje podstawowe
- ProducentROHM Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 108
- Inventory 1
- PCNs 2
- MaskPart BC858BW%
- IntroductionDate Nov 23, 1998
- SupplierUrl http://search.rohm.com/?q=BC858BWT106&la=en&sort=0&layout=site&count=10&ftype=
Parametry
- Category Bipolar Power
- Configuration Single
- Material N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 30
- Maximum Collector-Emitter Saturation Voltage (V) 0.3@0.5mA@10mA|0.65@5mA@100mA
- Maximum Collector-Emitter Voltage (V) 30
- Maximum DC Collector Current (A) 0.1
- Maximum Emitter Base Voltage (V) 5
- Maximum Power Dissipation (mW) 350
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) 250(Typ)
- Minimum DC Current Gain 210@2mA@5V
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type PNP