BC858BT/R13

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Main description	Trans GP BJT PNP 30V 0.1A 330mW 3-Pin SOT-23 T/R

Trans GP BJT PNP 30V 0.1A 330mW 3-Pin SOT-23 T/R

Informacje podstawowe

Category Bipolar Small Signal
Configuration Single
Material N/A
Maximum 3rd Order Intercept Point (dBm) N/R
Maximum Base Emitter Saturation Voltage (V) 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector Base Voltage (V) 30
Maximum Collector Cut-Off Current (nA) 15
Maximum Collector-Emitter Saturation Voltage (V) 0.3@0.5mA@10mA|0.65@5mA@100mA
Maximum Collector-Emitter Voltage (V) 30
Maximum DC Collector Current (A) 0.1
Maximum Delay Time (ns) N/A
Maximum Emitter Base Voltage (V) 5
Maximum Emitter Cut-Off Current (nA) 100
Maximum Fall Time (ns) N/A
Maximum Junction Ambient Thermal Resistance 375°C/W
Maximum Junction Case Thermal Resistance N/A
Maximum Noise Figure (dB) N/A
Maximum Operating Temperature (°C) 150
Maximum Power 1dB Compression (dBm) N/R
Maximum Power Dissipation (mW) 330
Maximum Rise Time (ns) N/A
Maximum Storage Temperature (°C) 150
Maximum Storage Time (ns) N/A
Maximum Transition Frequency (MHz) 200(Typ)
Maximum Turn-Off Time (ns) N/A
Maximum Turn-On Time (ns) N/A
Minimum DC Current Gain 200@2mA@5V
Minimum Operating Temperature (°C) -50
Minimum Storage Temperature (°C) -50
Number of Elements per Chip 1
Operational Bias Conditions N/R
Output Power (W) N/R
Supplier Temperature Grade N/A
Type PNP
Typical Input Capacitance (pF) N/A
Typical Output Capacitance (pF) 4.5(Max)
Typical Power Gain (dB) N/R