BC858BR
| Do pobrania | Download |
|---|---|
| Main description | Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23 |
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23
Informacje podstawowe
- ProducentCentral Semiconductor
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 50
- PCNs 1
- MaskPart BC858BR%
Parametry
- Category Bipolar Small Signal
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 30
- Maximum Collector Cut-Off Current (nA) 15
- Maximum Collector-Emitter Saturation Voltage (V) 0.3@0.5mA@10mA|0.65@5mA@100mA
- Maximum Collector-Emitter Voltage (V) 30
- Maximum DC Collector Current (A) 0.1
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 5
- Maximum Emitter Cut-Off Current (nA) 100
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance 357°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) 10
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 350
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Storage Time (ns) N/A
- Maximum Transition Frequency (MHz) 100(Min)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 220@2mA@5V
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type PNP
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) N/R