BC847B
| Do pobrania | Download |
|---|---|
| Main description | Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 |
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23
Informacje podstawowe
- ProducentCentral Semiconductor
- EURoHSUnknown (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 386
- PCNs 1
- MaskPart BC847B%
- IntroductionDate Jan 26, 2004
Parametry
- Category Bipolar Small Signal
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 50
- Maximum Collector Cut-Off Current (nA) 15
- Maximum Collector-Emitter Saturation Voltage (V) 0.25@0.5mA@10mA|0.6@5mA@100mA
- Maximum Collector-Emitter Voltage (V) 45
- Maximum DC Collector Current (A) 0.1
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 5
- Maximum Emitter Cut-Off Current (nA) 100
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance 357°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) 10
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 350
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Storage Time (ns) N/A
- Maximum Transition Frequency (MHz) 100(Min)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 200@2mA@5V
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type NPN
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) N/R