BC556A-TAP

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Main description Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Ammo
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Ammo

Informacje podstawowe

  • ProducentVishay
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 33
  • PCNs 25
  • MaskPart BC556A%
  • IntroductionDate Apr 02, 1998

Parametry

  • Category Bipolar Small Signal
  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/R
  • Maximum Base Emitter Saturation Voltage (V) 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
  • Maximum Collector Base Voltage (V) 80
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) 0.3@0.5mA@10mA|0.65@5mA@100mA
  • Maximum Collector-Emitter Voltage (V) 65
  • Maximum DC Collector Current (A) 0.1
  • Maximum Delay Time (ns) N/A
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Fall Time (ns) N/A
  • Maximum Junction Ambient Thermal Resistance 250°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Noise Figure (dB) 10
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/R
  • Maximum Power Dissipation (mW) 500
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Storage Time (ns) N/A
  • Maximum Transition Frequency (MHz) 150(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 110@2mA@5V
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/R
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type PNP
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) 6(Max)
  • Typical Power Gain (dB) N/R
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