AS4LC4M4E0Q-60JC

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Main description DRAM Chip EDO 16Mbit 4Mx4 3.3V 28-Pin SOJ
DRAM Chip EDO 16Mbit 4Mx4 3.3V 28-Pin SOJ

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 35
  • MaskPart AS4LC4M4E0Q60JC%
  • IntroductionDate Oct 04, 1993

Parametry

  • Address Bus Width (bit) 12
  • Data Bus Width (bit) 4
  • Density (bit) 16M
  • Density in Bits (bit) 16777216
  • Interface Type TTL
  • Maximum Access Time (ns) 60
  • Maximum Clock Rate (MHz) N/R
  • Maximum Operating Current (mA) 100
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 70
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) 0
  • Number of Bits per Word (bit) 4
  • Number of I/O Lines (bit) 4
  • Number of Internal Banks 1
  • Number of Words per Bank 4M
  • Operating Supply Voltage (V) 3.3
  • Organization 4Mx4
  • Supplier Temperature Grade Commercial
  • Type EDO
  • Typical Operating Supply Voltage (V) 3.3
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