AS4C4M32S-6BIN

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Main description DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA Tray
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 56
  • Inventory 3
  • MaskPart AS4C4M32S6BIN%
  • IntroductionDate Mar 25, 2013

Parametry

  • Address Bus Width (bit) 14
  • Data Bus Width (bit) 32
  • Density (bit) 128M
  • Density in Bits (bit) 134217728
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5
  • Maximum Clock Rate (MHz) 166
  • Maximum Operating Current (mA) 280
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 70
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) 0
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 32
  • Number of I/O Lines (bit) 32
  • Number of Internal Banks 4
  • Number of Words per Bank 1M
  • Operating Supply Voltage (V) 3.3
  • Organization 4Mx32
  • Supplier Temperature Grade Commercial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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